Памет SSD 4TB, Samsung 990 Evo Plus, NVMe, M.2 (2280), скорост на четене до 7250MB/s, скорост на запис до 6300MB/s

Samsung 990 Evo Plus

Power efficiency Power efficiency enhanced by 73% for more MB/s per watt,while maintaining performance and thermal control.

Cool power through your day

Optimised efficiency, extended performance. The nickel-coated controller helps increase MB/s per Watt by 73%, achieving the same power level and thermal control with less power consumption. Stay focused on work or play with no overheating or battery life worries.

Extra space. Extra speed.

Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data fast and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Bringing innovations to life For decades, Samsung’s NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Specifications

General Feature

• Application Client PCs
• Rated Capacity 4,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
• Form Factor M.2 (2280)
• Interface PCIe 4.0 x4 / 5.0 x2 NVMe 2.0
• Dimension (WxHxD) Max 80.15 x Max 22.15 x Max 2.38 mm
• Weight Max 9.0g Weight
• Storage Memory Samsung V-NAND TLC
• Controller Samsung in-house Controller
• Cache Memory HMB(Host Memory Buffer)

Special Feature

• TRIM Support Supported
• S.M.A.R.T Support Supported
• GC (Garbage Collection) Auto Garbage Collection Algorithm
• Encryption Support AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
• WWN Support Not supported
• Device Sleep Mode Support Yes

Performance

• Sequential Read Up to 7,250 MB/s * Performance may vary based on system hardware & configuration
• Sequential Write Up to 6,300 MB/s * Performance may vary based on system hardware & configuration
• Random Read (4KB, QD32) Up to 1,050,000 IOPS * Performance may vary based on system hardware & configuration
• Random Write (4KB, QD32) Up to 1,400,000 IOPS * Performance may vary based on system hardware & configuration

Environment

• Average Power Consumption (system level) Average: Read 5.5 W / Write 4.8 W* Actual power consumption may vary depending on system hardware & configuration
• Power consumption (Idle) Typical 60 mW * Actual power consumption may vary depending on system hardware & configuration
• Power Consumption (Device Sleep) Typical 5 mW * Actual power consumption may vary depending on system hardware & configuration
• Allowable Voltage 3.3 V ± 5 % Allowable voltage
• Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
• Operating Temperature 0 - 70 ℃ Operating Temperature
• Shock 1,500 G & 0.5 ms (Half sine)

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