Памет SSD 1TB, Gigabyte AORUS GP-AG41TB, NVMe PCIe 4.0 x4, M.2 (2280), скорост на четене 5000 MB/s, скорост на запис 4400 MB/s

Gigabyte AORUS Gen4 SSD 1TB
GP-AG41TB

Form Factor: M.2 2280
Interface: PCI-Express 4.0 x4, NVMe 1.3
Total Capacity: 1000GB*
Sequential Read Speed : up to 5000 MB/s**
Sequential Write speed : up to 4400 MB/s**
Wear Leveling, Over-Provision technologies
TRIM & S.M.A.R.T supported

World First PCIe 4.0x4 Controller
The World First PCIe 4.0x4 Controller, Phison PS5016-E16 controller, made by 28nm manufacturing technology. The advanced fabrication process ensures PS5016-E16 has enough compute power for ECC processing when adopting the latest 3D TLC NAND flash. PS5016-E16 also features eight NAND channels with 32 CE targets, DDR4 DRAM caching, and a PCIe 4.0x4 interface. As for features, the chip supports the NVMe 1.3 protocol, LDPC error correction, and Wear Leveling, Over-Provision technologies to improve reliability and durability of SSDs.

Selected High Speed 3D TLC NAND Flash (800MT/s)
The selected and high quality NAND Flash optimizes circuitry and architecture by increasing to 96 layers for higher storage space per unit area. 800MT/s throughput on the AORUS Gen 4 SSD far exceeds that of PCIe 3.0x4 devices for superior storage performance.

Xtreme Storage Performance
With the new PCIe 4.0 controller, AORUS Gen 4 SSD delivers blazing speeds: up to 5,000 MB/s for sequential read, and up to 4,400MB/s sequential write. Sequential Read performance of PCIe 4.0 SSDs is up to 40% faster than PCIe 3.0 SSDs. Get ready to enter the next generation of computing with faster and smoother, gaming, streaming, and graphics intensive rendering.

SSD Tool Box
The newly updated SSD Tool Box is a software that gives users an overview of the SSD Status and various aspects such as model name, FW version, health condition and sensor temperature. Moreover, users can clear all the data with the Secure Erase function. You can download the SSD Tool Box from the link.

Interface
PCI-Express 4.0 x4, NVMe 1.3

Form Factor
M.2 2280

Total Capacity
1‎000GB

NAND
3‎D TLC NAND Flash

External DDR Cache
DDR4 1GB

Sequential Read speed
Up to 5000 MB/s

Sequential Write speed
Up to 4400 MB/s

Random Read IOPS
up to 750k

Random Write IOPS
up to 700k

Dimension
8‎0 x 22 x 2.3 mm

Mean time between failure (MTBF)
1‎.77 million hours

Power Consumption (Active)
Average: R : 6.6W; W : 6.4W

Power Consumption (Idle)
1‎8.8mw

Temperature (Operating)
0‎°C to 70°C

Temperature (Storage)
-40°C to 85°C

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